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FDP5N50U

Fairchild Semiconductor
Part Number FDP5N50U
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Jul 7, 2014
Detailed Description FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET November2009 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET 500V, 4A, 2.0...
Datasheet PDF File FDP5N50U PDF File

FDP5N50U
FDP5N50U


Overview
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET November2009 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET 500V, 4A, 2.
0 Features • RDS(on) = 1.
65 ( Typ.
)@ VGS = 10V, ID = 2A • Low gate charge ( Typ.
11nC) • Low Crss ( Typ.
5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D G D S TO-220 FDP Series GD S TO-220F FDPF Series (potted) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 85 0.
67 -55 to +150 300 4 2.
4 16 216 4 8.
5 4.
5 28 0.
22 FDP5N50U FDPF5N50UT 500 ±30 4* 2.
4* 16* Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient FDP5N50U 1.
4 0.
5 62.
5 FDPF5N50UT 4.
5 62.
5 oC/W Units ©2009 Fairchild Semiconductor Corporation FDP5N50U / FDPF5N50UT Rev.
A-1 1 www.
fairchildsemi.
com FDP5N50U / FDPF5N50UT N-Channel MOSFE...


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