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FDP5N50

Fairchild Semiconductor
Part Number FDP5N50
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Dec 5, 2014
Detailed Description FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features • RDS(on) = 1.15Ω ( Typ...
Datasheet PDF File FDP5N50 PDF File

FDP5N50
FDP5N50

Overview
FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.
4Ω Features • RDS(on) = 1.
15Ω ( Typ.
)@ VGS = 10V, ID = 2.
5A • Low gate charge ( Typ.
11nC) • Low Crss ( Typ.
5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDP5N50 FDPF5N50 500 ±30 5 5* 3 3* 20 20* 225 5 8.
5 4.
5 85 28 0.
67 0.
22 -55 to +150 300 Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient FDP5N50 1.
4 0.
5 62.
5 FDPF5N50 4.
5 62.
5 Units V V A A mJ A mJ V/ns W W/oC oC oC Units oC/W ©2007 Fairchild Semiconductor Corporation FDP5N50 / FDPF5N50 Rev.
A 1 www.
fairchildsemi.
com FDP5N50 / FDPF5N50 N-Channel MOSFET Package Marking and Ordering Inf...


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