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HY57V161610FTP-5

Hynix Semiconductor
Part Number HY57V161610FTP-5
Manufacturer Hynix Semiconductor
Description 16Mb Synchronous DRAM
Published Jul 12, 2014
Detailed Description 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision Hist...
Datasheet PDF File HY57V161610FTP-5 PDF File

HY57V161610FTP-5
HY57V161610FTP-5

Overview
16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No.
0.
1 1.
0 History Initial Draft Final Revision Draft Date Feb.
2006 Apr.
2006 Remark Preliminary www.
DataSheet4U.
com This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
1.
0 / Apr.
2006 1 Synchronous DRAM Memory 16Mbit (1Mx16bit) HY57V161610FT(P)-xx(I) Series 11 DESCRIPTION THE Hynix HY57V161610F-Series is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth.
HY57V161610F-Series is organized as 2banks of 524,288x16.
HY57V161610F-Series is offering fully synchronous operation referenced to a positive edge clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths a...


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