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FLM7785-4F

SUMITOMO
Part Number FLM7785-4F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM7785-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB...
Datasheet PDF File FLM7785-4F PDF File

FLM7785-4F
FLM7785-4F

Overview
FLM7785-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.
5dBm (Typ.
) High Gain: G1dB = 8.
5dB (Typ.
) High PAE: ηadd = 35% (Typ.
) Low IM3 = -46dBc@Po = 25.
5dBm Broad Band: 7.
7 ~ 8.
5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25.
0 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents ...


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