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C3831

Sanken electric
Part Number C3831
Manufacturer Sanken electric
Description Silicon NPN Transistor
Published Jul 14, 2014
Detailed Description 2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maxim...
Datasheet PDF File C3831 PDF File

C3831
C3831

Overview
2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.
5max 1 .
3 max 8typ 105typ (Ta=25°C) 2SC3831 Unit External Dimensions MT-100(TO3P) 5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4.
8±0.
2 2.
0±0.
1 mA µA 4.
0 V V MHz pF 19.
9±0.
3 a b ø3.
2±0.
1 20.
0min 4.
0max V 2 3 1.
05 +0.
2 -0.
1 0.
65 +0.
2 -0.
1 1.
4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 40 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
5 IB2 (A) –1.
0 ton (µs) 1max tstg (µs) 4.
5max tf (µs) 0.
5max 5.
45±0.
1 B C E 5.
45±0.
1 Weight : Approx 6.
0g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) 10 A .
2 1A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) =1 800 mA V B E (sat) 1 –55˚C (Cas 25˚C (C Collector Current I C (A) e Temp) p) ) ) mp 6 400 mA ase Tem Collector Current I C (A) 8 IB 60 0m A 8 6 p) Tem Te (Ca se 4 4 ˚C (Cas 25˚C e Te 200mA (C a 125 ˚C 100mA 2 12 C 5˚ 25 2 ˚C V C E (sat) 0 0.
02 0.
05 0.
1 0.
5 1 5 –5 0 0 1 2 3 4 5 10 0 0 0.
2 0.
4 0.
6 0.
8 –55˚C (Case se Temp 125˚C (Case mp) ) Temp 1.
0 1.
2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 125˚C θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) 10 t on •t stg • t f – I C Characteristics (Typical) t on• t s t g • t f ( µ s) θ j-a ...


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