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PBSS5320T

NXP
Part Number PBSS5320T
Manufacturer NXP
Description PNP transistor
Published Jul 16, 2014
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes ...
Datasheet PDF File PBSS5320T PDF File

PBSS5320T
PBSS5320T

Overview
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 15 NXP Semiconductors 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet PBSS5320T FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation.
APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO).
DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4320T.
MARKING TYPE NUMBER PBSS5320T MARKING CODE(1) ZH∗ Note 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-emitter voltage collector current ...


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