DatasheetsPDF.com

PBSS5320X

NXP
Part Number PBSS5320X
Manufacturer NXP
Description PNP transistor
Published Jul 16, 2014
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor Product...
Datasheet PDF File PBSS5320X PDF File

PBSS5320X
PBSS5320X

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 27 2004 Nov 04 Philips Semiconductors Product specification 20 V, 3 A PNP low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements.
APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting.
• Peripheral drivers – Driver in low supply voltage applications (e.
g.
lamps and LEDs) – Inductive load driver (e.
g.
relays, buzzers and motors).
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER PBSS5320X MAX.
−20 −3 −5 105 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4320X.
MARKING TYPE NUMBER PBSS5320X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5320X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 MARKING CODE S45 Fig.
1 Simplified outline (SOT89) and symbol.
1 sym079 3 2 1 2004 Nov 04 2 Philips Semiconductors Product specification 20 V, 3 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 note 3 note 4 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature − − − − −65 − −65 CONDITIONS open emitter open base open collector note 4 limited by Tj(max) − − − ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)