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AM2307

AXElite
Part Number AM2307
Manufacturer AXElite
Description P-Channel Enhancement Mode MOSFET
Published Jul 17, 2014
Detailed Description AM2307 P-Channel Enhancement Mode MOSFET Features • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS...
Datasheet PDF File AM2307 PDF File

AM2307
AM2307


Overview
AM2307 P-Channel Enhancement Mode MOSFET Features • -30V/-3A , RDS(ON)=100mΩ(typ.
) @ VGS=-10V RDS(ON)=140mΩ(typ.
) @ VGS=-4.
5V Pin Description Top View D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT-23 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G S D P Channel MOSFET Ordering and Marking Information VÛmw`R•yÑb€ AM2307 w.
goftech.
com Package R : SOT23-3L Packing Package Packing Blank : Tube A : Taping XXX - Date Code AM2307 : A7XXX Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -30 ±20 -3 -12 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec.
1 Axelite Confidential Materials, do not copy or distribute without written consent.
AM2307 Absolute Maximum Ratings Cont.
Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 1.
25 0.
5 150 -55 to 150 100 Unit W °C °C °C/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) AM2307 Typ.
Max.
Min.
-30 -1 -1 100 140 0.
6 8 1.
9 1.
1 10 8 25 5 550 120 75 pF 20 20 50 15 -3 ±100 120 170 1.
3 13 nC Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VÛmw`R•yÑb€ VGS=0V , IDS=-250µA VDS=-24V , VGS=0V VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V VGS=-10V , IDS=-3A VGS=-4.
5V , IDS=-2.
5A ISD=-1.
25A , VGS=0V VDS=-15V , IDS=-3A VGS=-10V VDD=-15V , IDS=-1A , VGEN=-10V , RG=6Ω RL=15Ω VGS=0V V µA V nA mΩ V Diode Forward Voltage Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr ...



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