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BCW60B

Part Number	BCW60B
Manufacturer	CDIL
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Published	Aug 1, 2014
Detailed Description	Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package B...
Datasheet	BCW60B PDF File

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.
c.
) Total power dissipation Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; IC = 200 mA; B = 200Hz VCES VCE0 IC Ptot Tj fT F max.
max.
max.
max.
max.
typ.
typ.
32 32 200 250 150 V V mA mW °C 250 MHz 2 dB Continental Device India Limited Data Sheet Page 1 of 3 BCW60A BCW60B BCW60C BCW60D RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter cut–off current VBE = 0; VCE = 32 V VBE = 0; VCE = 32V; Tamb = 150°C Emitter–base cut–off current IC = 0; VEB = 4 V Saturation voltages at IC = 10 mA; IB = 0,25 mA VCES VCE0 VEB0 IC IB Ptot Tstg Tj max.
32 V max.
32 V max.
5 V max.
200 mA max.
50 mA max.
250 mW –55 to +150° C max.
150 ° C 500 K / W Rth j–a = ICES ICES IEB0 < < < 20 nA 20 mA 20 nA VCEsat 0,05 to 0,35 V VBEsat 0,6 to 0,85 V VCEsat VBEsat fT Cc Ce F BCW60A 60B at IC = 50 mA; IB = 1,25 mA Transition frequency at f = 100 MHz · IC = 10 mA; VCE = 5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 10V Emitter capacitance at f = 1 MHz IC = Ic = 0; VEB = 0,5 V Noise figure at RS = 2 kW IC = 200 m.
mA; VCE = 5 V; f: 1 kHz; B = 200 Hz D.
C.
...

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