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IRF820

Harris
Part Number IRF820
Manufacturer Harris
Description N-Channel Power MOSFETs
Published Aug 8, 2014
Detailed Description S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power...
Datasheet PDF File IRF820 PDF File

IRF820
IRF820

Overview
S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.
2A and 2.
5A, 450V and 500V, 3.
0 and 4.
0 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17405.
November 1997 Features • 2.
2A and 2.
5A, 450V and 500V • rDS(ON) = 3.
0Ω and 4.
0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines f...


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