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SEMiX151GD12Vs

Semikron International
Part Number SEMiX151GD12Vs
Manufacturer Semikron International
Description IGBT
Published Aug 9, 2014
Detailed Description SEMiX151GD12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200...
Datasheet PDF File SEMiX151GD12Vs PDF File

SEMiX151GD12Vs
SEMiX151GD12Vs

Overview
SEMiX151GD12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 231 176 150 450 -20 .
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20 Tj = 125 °C 10 -40 .
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175 Tc = 25 °C Tc = 80 °C 189 141 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 900 -40 .
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175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 .
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125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 13 VGES tpsc Tj IF IFnom Inverse diode SEMiX151GD12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Vis...


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