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K2375

Panasonic Semiconductor
Part Number K2375
Manufacturer Panasonic Semiconductor
Description 2SK2375
Published Aug 13, 2014
Detailed Description Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-spe...
Datasheet PDF File K2375 PDF File

K2375
K2375


Overview
Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.
5±0.
5 4.
5 φ3.
2±0.
1 10.
0 3.
0±0.
3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5˚ 26.
5±0.
5 5˚ 23.
4 22.
0±0.
5 2.
0 1.
2 5˚ 18.
6±0.
5 5˚ 5˚ 4.
0 2.
0±0.
2 1.
1±0.
1 2.
0 0.
7±0.
1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 ±30 ±8 ±16 60 100 3 150 −55 to +150 Unit V V 5.
45±0.
3 3.
3±0.
3 0.
7±0.
1 5.
45±0.
3 5.
5±0.
3 5˚ 1 2 3 A A mJ W °C °C 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 1.
9mH, IL = 8A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 200V, ID = 4A VGS = 10V, RL = 50Ω Conditions VDS = 720V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 1800 VDS = 20V, VGS = 0, f = 1MHz 200 90 30 70 80 250 1.
25 41.
67 3 900 2 1.
3 5.
5 −1.
6 5 1.
7 min typ max 100 ±1 Unit µA µA V V Ω S V pF pF pF ns ns ns ns °C/W °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 2.
0 1 Power F-MOS FETs Area of safe operation (ASO) 100 12...


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