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BC813C

Part Number	BC813C
Manufacturer	Fairchild Semiconductor
Description	PNP Epitaxial Silicon Transistor
Published	Aug 20, 2014
Detailed Description	BC318C — PNP Epitaxial Silicon Transistor September 2007 BC318C PNP Epitaxial Silicon Transistor • This device is desi...
Datasheet	BC813C PDF File

Overview

BC318C — PNP Epitaxial Silicon Transistor September 2007 BC318C PNP Epitaxial Silicon Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
1 TO-92 1.
Emitter 2.
Base 3.
Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Operating and Storage Junction Temperature Range Parameter Value 30 20 5 100 -55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA Ta=25°C unless otherwise noted Parameter Total Device Dissipatio...

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