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BSS138PS

NXP Semiconductors
Part Number BSS138PS
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 24, 2014
Detailed Description BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File BSS138PS PDF File

BSS138PS
BSS138PS

Overview
BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev.
1 — 2 November 2010 Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.
3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 300 mA [1] Min - Typ 0.
9 Max 60 ±20 320 1.
6 Unit V V mA Ω Per transistor [2] [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Pulse test: tp ≤ 300 μs; δ ≤ 0.
01.
NXP Semiconductors BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning Symbol S1 G1 D2 S2 G2 D1 Description source1 gate1 drain2 source2 gate2 drain1 1 2 3 S1 G1 S2 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 msd901 3.
Ordering information Table 3.
Ordering information Package Name BSS138PS SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4.
Marking Table 4.
BSS138PS [1] * = placeholder for manufacturing site code Marking codes Marking code[1] NZ* Type number 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current Conditions Tamb = 25 °C Tamb = 25 °C VGS = 10 V Tamb = 25 °C Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs [1] Min - Max 60 ±20 320 200 1.
2 Unit V V mA mA ...


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