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BSS138

ON Semiconductor
Part Number BSS138
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Nov 6, 2018
Detailed Description N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mo...
Datasheet PDF File BSS138 PDF File

BSS138
BSS138

Overview
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features • 0.
22 A, 50 V ♦ RDS(on) = 3.
5 W @ VGS = 10 V ♦ RDS(on) = 6.
0 W @ VGS = 4.
5 V • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free and Halogen Free DATA SHEET www.
onsemi.
com D G S SOT−23−3 CASE 318−08 MARKING DIAGRAM 3 Drain SSMG G 1 Gate 2 Source SS = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location.
ORDERING INFORMATION Device BSS138, BSS138−G Package SOT−23−3 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005 1 November, 2021 − Rev.
6 Publication Order Number: BSS138/D BSS138 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current – Continuous (Note 1) Drain Current – Pulsed (Note 1) 50 V ±20 0.
22 A 0.
88 PD Maximum Power Dissipation (Note 1) Derate Above 25°C 0.
36 W 2.
8 mW/°C TJ, TSTG TL Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 s −55 to +150 °C 300 Stresses exceeding ...


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