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GT80J101A

Toshiba Semiconductor
Part Number GT80J101A
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications ...
Datasheet PDF File GT80J101A PDF File

GT80J101A
GT80J101A

Overview
GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.
40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.
0 V (max) (IC = 80 A) · · · Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg ¾ Rating 600 ±20 80 160 200 150 -55~150 0.
8 Unit V V A W °C °C N·m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature Screw torque JEDEC JEITA TOSHIBA ― ― 2-21F2C Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance tf toff Rth (j-c) Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr ton 15 V 0 -15 V 3.
75 9 VIN 33 W Test Condition VGE = ±25 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 80 mA IC = 10 A, VGE = 15 V IC = 80 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Weight: 9.
75 g (typ.
) Min ¾ ¾ 3.
0 ¾ ¾ ¾ Typ.
¾ ¾ ¾ ¾ 2.
4 5500 0.
3 0.
5 0.
25 0.
7 ¾ Max ±500 1.
0 6.
0 2.
0 3.
0 ¾ 0.
6 0.
8 ms 0.
40 1.
0 0.
625 °C/W Unit nA mA V V pF ¾ VOUT ¾ ¾ ¾ ¾ VCC = 300 V ¾ 1 2002-01-18 GT80J101A IC - VCE 100 Tc = 25 °C 10 VCE - VGE Common emitter Common emitter (V) 15 20 10 8 Tc = -40°C 8 10 20 6 40 4 60 IC = 80 A (A) IC 60 6 40 20 5 Collector-emitter voltage Collector current VCE VGE = 4 V 0 2 4 6 8 10 80 2 0 0 0 4 8 12 16 20 24 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 VCE - VGE Common emitter (V) Tc = 25°C 8 10 6 20 40 4 60 IC = 80 A (V) Tc = 125°C 8 10 6 20 40 4 60 2 IC = 80 A VCE Collector-emitter voltage 2 0 0 Collector-emitter voltage VCE 4 8 12 16 20 24 0 0 4 8 12 16 20 24 Gate-emitter voltage VGE (V) Gate-emitter vo...


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