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TK6A53D

Toshiba Semiconductor
Part Number TK6A53D
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 12, 2014
Detailed Description TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A53D Switching Regulator Applications Ф3...
Datasheet PDF File TK6A53D PDF File

TK6A53D
TK6A53D

Overview
TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A53D Switching Regulator Applications Ф3.
2 ± 0.
2 10 ± 0.
3 Unit: mm 2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 13 ± 0.
5 0.
69 ± 0.
15 Ф0.
2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 525 ±30 6 24 35 147 6 3.
5 150 −55 to 150 A W mJ A mJ °C °C Unit V V 2.
54 0.
64 ± 0.
15 15.
0 ± 0.
3 • • • • Low drain-source ON-resistance: RDS (ON) = 1.
1 Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) Pulse (t = 1 ms) (Note 1) 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHI...


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