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AP2603GY

Advanced Power Electronics
Part Number AP2603GY
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 13, 2014
Detailed Description AP2603GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Datasheet PDF File AP2603GY PDF File

AP2603GY
AP2603GY

Overview
AP2603GY Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device TSOP-6 D D D D S P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -20V 65mΩ -5.
0A ID Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The TSOP-6 package is universally used for all commercial-industrial applications.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 ±12 -5 -4 -20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit ℃/W Data and specifications subject to change without notice 200129043 AP2603GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.
-20 -0.
5 - Typ.
-0.
1 Max.
Units 53 65 120 250 -1.
2 -1 -10 ±100 16 1200 V V/℃ mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4.
5A VGS=-4.
5V, ID=-4.
2A VGS=-2.
5V, ID=-2.
0A VGS=-1.
8V, ID=-1.
0A 9 10.
6 2.
32 3.
68 5.
9 3.
6 32.
4 2.
6 740 167 126 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.
8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ±12V ID=-4.
2A VDS=-16V VGS=-4.
5V VDS=-15V ID=-4.
2A RG=6Ω,VGS=-10V RD=3.
6Ω VGS=0V VDS=-...


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