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AP9406M

Advanced Power Electronics
Part Number AP9406M
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Sep 14, 2014
Detailed Description AP9406M Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance D D D D N-CHANNEL ENHANCEMENT ...
Datasheet PDF File AP9406M PDF File

AP9406M
AP9406M

Overview
AP9406M Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 30V 18mΩ 9A ▼ Fast Switching Characteristic SO-8 S S S ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 9 7.
5 50 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
50 Unit ℃/W Data and specifications subject to change without notice 201013041 AP9406M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 - Typ.
0.
02 15 8 2 4 7 6 19 7 620 230 90 3.
2 Max.
Units 18 25 3 1 25 ±100 13 1530 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=9A VGS=4.
5V, ID=7A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=9A VDS=24V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Gate-Sourc...


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