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AP9410GM

Advanced Power Electronics
Part Number AP9410GM
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 15, 2014
Detailed Description AP9410GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast...
Datasheet PDF File AP9410GM PDF File

AP9410GM
AP9410GM

Overview
AP9410GM Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S S S 30V 6mΩ 18A SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 3 3 Rating 30 ± 12 18 15 80 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
50 Unit ℃/W Data and specifications subject to change without notice 201103032 AP9410GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=18A VGS=4.
5V, ID=12A VGS=2.
5V, ID=6A Min.
30 - Typ.
0.
01 47 59 10 23 16 12 96 30 660 400 Max.
Units 5 6 8 1.
2 1 25 ±100 95 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=12A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 12V ID=18A VDS=24V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.
0M...


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