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APTGT150DH170

Advanced Power Technology
Part Number APTGT150DH170
Manufacturer Advanced Power Technology
Description IGBT
Published Sep 17, 2014
Detailed Description APTGT150DH170 Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1700V IC = 150A @ Tc =...
Datasheet PDF File APTGT150DH170 PDF File

APTGT150DH170
APTGT150DH170

Overview
APTGT150DH170 Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1700V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 300A @ 1600V These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-5 APTGT150DH170 – Rev 0 May, 2005 Max ratings 1700 250 150 300 ±20 890 Unit V A V W APTGT150DH170 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 2.
0 2.
4 5.
8 Max 350 2.
4 6.
5 600 Unit µA V V nA 5.
0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitanc...


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