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Si4800DY

Vishay
Part Number Si4800DY
Manufacturer Vishay
Description Fast Switching MOSFET
Published Sep 17, 2014
Detailed Description Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0185 @...
Datasheet PDF File Si4800DY PDF File

Si4800DY
Si4800DY

Overview
Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.
0185 @ VGS = 10 V 0.
033 @ VGS = 4.
5 V ID (A) 9 7 D D D D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4800DY Si4800DY-T1 (with Tape and Reel) 8 7 6 5 D D D D N-Channel MOSFET G S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "25 9 7 40 2.
3 2.
5 1.
6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a t v 10 sec Steady State RthJA 70 Symbol Typical Maximum 50 Unit _C/W Notes a.
Surface Mounted on FR4 Board.
b.
t v 10 sec.
D...


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