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AP1001BSQ

Advanced Power Electronics
Part Number AP1001BSQ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 21, 2014
Detailed Description AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profil...
Datasheet PDF File AP1001BSQ PDF File

AP1001BSQ
AP1001BSQ

Overview
AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.
7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 6mΩ 15A Description The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible.
The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
GreenFETTM D G S D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 4 5 3 3 SQ Rating 30 +20 15 12 59 120 2.
2 1.
4 34 28.
8 24 -40 to 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Continuous Drain Current, V GS @ 10V4 Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range Single Pulse Avalanche Energy Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 3.
7 58 ℃/W ℃/W 1 201106013 Data and specifications subject to change without notice AP1001BSQ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=15A VGS=4.
5V, ID=12A Min.
30 1 12 - Typ.
4.
5 7.
4 22 9 2.
5 5 9 55 20 5.
6 810 295 150 2 Max.
Units 6 10 2.
5 1 150 +100 14.
4 1300 3.
2 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID...


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