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AP1001BSQ-3

Advanced Power Electronics
Part Number AP1001BSQ-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 21, 2014
Detailed Description Advanced Power Electronics Corp. AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low C...
Datasheet PDF File AP1001BSQ-3 PDF File

AP1001BSQ-3
AP1001BSQ-3

Overview
Advanced Power Electronics Corp.
AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.
7mm ) D BV DSS RDS(ON) G S 25V 6mΩ 15A ID Description The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability.
The GreenFETTM package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.
GreenFETTM D G S D Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=100°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 3 SQ Rating 25 ±20 15 12 59 120 2.
2 1.
4 34 5 Units V V A A A A W W W mJ A °C °C Continuous Drain Current Pulsed Drain Current 1 3 ...


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