DatasheetsPDF.com

AP60T03GH-HF-3

Advanced Power Electronics
Part Number AP60T03GH-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 22, 2014
Detailed Description Advanced Power Electronics Corp. AP60T03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low...
Datasheet PDF File AP60T03GH-HF-3 PDF File

AP60T03GH-HF-3
AP60T03GH-HF-3

Overview
Advanced Power Electronics Corp.
AP60T03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 12mΩ 45A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S D (tab) TO-252 (H) The AP60T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.
The through-hole TO-251 version (AP60T03GJ-HF-3) is available where a small PCB footprint is required.
G D S D (tab) TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA =25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 ±20 45 32 120 44 0.
3 2.
4 -55 to 175 -55 to 175 Units V V A A A W W/°C W °C °C Total Power Dissipation Linear Derating Factor Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.
4 62.
5 110 Units °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP60T03GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP60T03GJ-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube) ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201112077-3 1/6 Advanced Power Electronics Corp.
AP60T03GH/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆BVDSS/∆Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
30 1 - Typ.
0.
03 25 12 4 7 10 9 58 18 6 200 135 1.
4 Max.
Units 12 25 3 1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)