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AP60T03GH-HF

Advanced Power Electronics
Part Number AP60T03GH-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Apr 17, 2016
Detailed Description Advanced Power Electronics Corp. AP60T03GH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Dr...
Datasheet PDF File AP60T03GH-HF PDF File

AP60T03GH-HF
AP60T03GH-HF

Overview
Advanced Power Electronics Corp.
AP60T03GH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP60T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID 30V 12mΩ 45A GD S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range 30 +20 45 32 120 44 0.
3 2.
4 -55 to 175 -55 to 175 V V A A A W W/℃ W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 3.
4 62.
5 Data and specifications subject to change without notice Units ℃/W ℃/W 1 201501298 AP60T03GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=20A VGS=4.
5V, ID=15A Gate Threshold Voltage Forward Transconductance2 VDS=VGS, ID=250uA VDS=10V, ID=1...


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