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AP99T06AGP-HF

Advanced Power Electronics
Part Number AP99T06AGP-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description AP99T06AGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fa...
Datasheet PDF File AP99T06AGP-HF PDF File

AP99T06AGP-HF
AP99T06AGP-HF

Overview
AP99T06AGP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 4.
2mΩ 135A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.
G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 Rating 60 +20 135 120 85 320 138.
8 2 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
9 62 Units ℃/W ℃/W 1 201108162 Data and specifications subject to change without notice AP99T06AGP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=48V, VGS=0V VGS= +20V, VDS=0V ID=30A VDS=48V VGS=10V VDS=30V ID=30A RG=1Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
60 2 - Typ.
70 110 16 55 18 57 40 22 820 510 1.
1 Max.
Units 4.
2 5 25 +100 175 V mΩ V S uA nA nC nC...


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