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AP99T06AGP-HF-3

Advanced Power Electronics
Part Number AP99T06AGP-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description Advanced Power Electronics Corp. AP99T06AGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Lowe...
Datasheet PDF File AP99T06AGP-HF-3 PDF File

AP99T06AGP-HF-3
AP99T06AGP-HF-3



Overview
Advanced Power Electronics Corp.
AP99T06AGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Lower On-Resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 60V 4.
2mΩ 135A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP99T06AGP-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives.
The TO-220 through-hole package is often used where a small PCB footprint or an attached heatsink is required.
G D TO-220 (P) S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 60 ±20 135 120 85 320 139 2 -55 to 150 -55 to 150 Units V V A A A A W W °C °C Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
9 62 Units °C/W °C/W Ordering Information AP99T06GAP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes (50pcs/tube) ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201010181-3 1/5 Advanced Power Electronics Corp.
AP99T06AGP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40...



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