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AP4002H

Advanced Power Electronics
Part Number AP4002H
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description AP4002H/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic...
Datasheet PDF File AP4002H PDF File

AP4002H
AP4002H

Overview
AP4002H/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 5Ω 2A Description AP4002 series are specially designed as chopper regulator, DC/DC converter and power drive application.
The APEC MOSFET provide the best conbination of fast switching, ruggedized design and cost-effectiveness.
G D S TO-251(J) G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 2 8 20 0.
16 20 2 -55 to 150 -55 to 150 Units V V A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 6.
25 110 Unit ℃/W ℃/W 200420072-1/4 Data & specifications subject to change without notice AP4002H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Test Conditions VGS=0V, ID=1mA VGS=10V, ID=1.
0A VDS=VGS, ID=250uA VDS=10V, ID=2.
0A VDS=600V, VGS=0V VGS=±30V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=10V f=1.
0MHz Min.
600 2 - Typ.
1.
5 12 2 5.
5 10 12 52 19 375 170 45 Max.
Units 5 4 100 ±1 19 600 V Ω V S uA uA nC nC nC ns ns ns ns pF pF pF Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitanc...


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