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AP2317GN-HF-3

Advanced Power Electronics
Part Number AP2317GN-HF-3
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description Advanced Power Electronics Corp. AP2317GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Small ...
Datasheet PDF File AP2317GN-HF-3 PDF File

AP2317GN-HF-3
AP2317GN-HF-3

Overview
Advanced Power Electronics Corp.
AP2317GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Small Package Outline Surface Mount Device RoHS-compliant, Halogen-free D BV DSS R DS(ON) G S -20V 52mΩ -4.
2A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2317GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
This device is well suited for use in medium current applications such as load switches.
D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±8 -4.
2 -3.
4 -16 1.
38 0.
01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2317GN-HF-3 : in RoHS-compliant, halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200809021-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 AP2317GN-HF-3 Test Conditions VGS=0V, ID=-250uA VGS=-4.
5V, ID=-4A VGS=-2.
5V, ID=-3A VGS=-1.
8V, ID=-1A Min.
-20 -0.
3 - Typ.
7 13 1.
8 4.
7 10 18 23 31 120 105 Max.
Units 52 65 90 -1 -1 -10 ±100 21 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS...


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