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AP2317GN-HF

Advanced Power Electronics
Part Number AP2317GN-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description Advanced Power Electronics Corp. AP2317GN-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Dri...
Datasheet PDF File AP2317GN-HF PDF File

AP2317GN-HF
AP2317GN-HF

Overview
Advanced Power Electronics Corp.
AP2317GN-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device ▼ RoHS Compliant SOT-23 G S Description AP2317 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
BVDSS RDS(ON) ID G -20V 52mΩ - 4.
2A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.
5V Drain Current3, VGS @ 4.
5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range - 20 +8 -4.
2 -3.
4 -16 1.
38 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-amb Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201501212 AP2317GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Static Drain-Source On-Resistance2 VGS=-4.
5V, ID=-4A VGS=-2.
5V, ID=-3A VGS=-1.
8V, ID=-1A Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-5V, ID=-4A Drain-Source Leakage Current VDS=-16V, VGS=0V Drain-Source Leakage Current (Tj=55oC) VDS=-16V, VGS=0V Gate-Source Leakage VGS= + 8V, VDS=0V Total Gate Charge2 ID=-4A Gate-Sou...


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