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AP9T18GEJ

Advanced Power Electronics
Part Number AP9T18GEJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ G-S Diode embedded ▼ Capable of 2.5V gate drive ...
Datasheet PDF File AP9T18GEJ PDF File

AP9T18GEJ
AP9T18GEJ

Overview
AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ G-S Diode embedded ▼ Capable of 2.
5V gate drive ▼ Surface mount package ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 40A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 20 ±12 40 25 160 31 0.
25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-amb...


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