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AP62T02GH

Advanced Power Electronics
Part Number AP62T02GH
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP62T02GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ F...
Datasheet PDF File AP62T02GH PDF File

AP62T02GH
AP62T02GH

Overview
AP62T02GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 48A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP62T02GJ) are available for low-profile applications.
GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 48 30 120 36.
8 0.
3 3 Units V V A A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 3 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200504062-1/4 AP62T02GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
30 0.
5 - Typ.
0.
02 10 13 34 13 2.
6 8 7.
5 90 22 6.
5 950 220 160 1.
1 Max.
Units 12 16 1.
5 1 250 ±100 20 1420 1.
7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A VGS=4.
5V, ID=15A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Thresho...


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