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AP62T02GJ

Advanced Power Electronics
Part Number AP62T02GJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP62T02GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ F...
Datasheet PDF File AP62T02GJ PDF File

AP62T02GJ
AP62T02GJ

Overview
AP62T02GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 48A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP62T02GJ) are available for low-profile applications.
GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 48 30 120 36.
8 0.
3 3 Units V V A A A W W/℃ mJ A ℃...


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