DatasheetsPDF.com

HAZ20000-SB

LEM
Part Number HAZ20000-SB
Manufacturer LEM
Description Current Transducers HAZ 4000~20000-SB
Published Mar 23, 2005
Detailed Description Current Transducers HAZ 4000..20000-SB For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvani...
Datasheet PDF File HAZ20000-SB PDF File

HAZ20000-SB
HAZ20000-SB



Overview
Current Transducers HAZ 4000.
.
20000-SB For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
IPN = 4000.
.
20000 A VOUT = ± 10 V Preliminary Electrical data Primary nominal current IPN (A) 4000 6000 10000 12000 14000 20000 Primary current measuring range IP (A) ± ± ± ± ± ± 4000 6000 10000 12000 14000 20000 Type HAZ HAZ HAZ HAZ HAZ HAZ 4000-SB 6000-SB 10000-SB 12000-SB 14000-SB 20000-SB Features • Hall effect measuring principle • Galvanic isolation between primary ± 15 ± 30 30,000 12 2000 1) > 1000 ± 10 100 > 10 V mA At kV V MΩ V Ω kΩ VC IC IOC Vd Vb RIS VOUT ROUT RL Supply voltage (± 5 %) Current consumption Overload capacity R.
m.
s.
voltage for AC isolation test, 60 Hz, 1 mn R.
m.
s.
rated voltage, safe separation Isolation resistance @ 500 VDC Output voltage @ ± IPN, RL = 10 kΩ, TA = 25°C Output internal resistance approx.
Load resistance • Instantaneous voltage output • Isolation voltage 12kV~ • Low power consumption • Package in PBT meets UL 94-V0 and secondary circuit Advantages • Easy mounting • Small size and space savings • Only one design for wide current • High immunity against external interference ratings range Accuracy - Dynamic performance data X ε L VOE VOH VOT TCε G tr di/dt f Accuracy @ IPN, TA = 25°C (without offset) Linearity 2) (0 .
.
± IPN) Electrical offset voltage, TA = 25°C Hysteresis offset voltage @ IP = 0; after an excursion of 1 x IPN Thermal drift of VOE Thermal drift of the gain (% of reading) Response time @ 90% of IP di/dt accurately followed Frequency bandwidth 3)(- 3 dB) <±1 % < ± 1 % of IPN < ± 50 mV < ± 50 mV <±1 mV/K < ± 0.
05 %/K < 10 µs > 50 A/µs DC .
.
3 kHz Applications • Battery supplied applications • Uninterruptible Power Supplies • Power supplies for welding and elecommunication applications.
(UPS) General data TA TS m Ambient operating temperature Ambient storage temperature Mass Stan...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)