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IPG20N04S4-09

Infineon
Part Number IPG20N04S4-09
Manufacturer Infineon
Description Power Transistor
Published Oct 5, 2014
Detailed Description IPG20N04S4-09 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 8.6 20 V mW A Features • Dual N-...
Datasheet PDF File IPG20N04S4-09 PDF File

IPG20N04S4-09
IPG20N04S4-09

Overview
IPG20N04S4-09 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 8.
6 20 V mW A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N04S4-09 Package PG-TDSON-8-4 Marking 4N0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation on...


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