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H57V2582GTR-75L

Hynix Semiconductor
Part Number H57V2582GTR-75L
Manufacturer Hynix Semiconductor
Description 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Published Oct 11, 2014
Detailed Description www.DataSheet4U.com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell A...
Datasheet PDF File H57V2582GTR-75L PDF File

H57V2582GTR-75L
H57V2582GTR-75L

Overview
www.
DataSheet4U.
com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 8,388,608 x 8 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Aug.
2009 1 Synchronous DRAM Memory 256Mbit H57V2582GTR Series www.
DataSheet4U.
com 111 Document Title 256Mbit (32M x8) Synchronous DRAM Revision History Revision No.
0.
1 1.
0 History Preliminary Release Draft Date Jun.
2009 Aug.
2009 Remark Rev 1.
0 / Aug.
2009 2 Synchronous DRAM Memory 256Mbit H57V2582GTR Series www.
DataSheet4U.
com 111 DESCRIPTION The Hynix H57V2582GTR Synchronous DRAM is 268,435,456bit CMOS Synchronous DRAM, ideally suited for the consumer memory applications which requires large memory density and high bandwidth.
It is organized as 4banks of 8,388,608 x 8 I/O.
Synchronous DRAM is a type of DRAM which operates in synchronization with input clock.
The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK).
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 Input/ Output bus.
All the commands are latched in synchronization with the rising edge of CLK.
The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page.
An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
The Synchronous DRAM uses an internal pipelined architecture to achieve high-speed operation.
This architecture is compartible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access.
Precharging one bank while access...


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