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H57V2582GTR-75J

Part Number	H57V2582GTR-75J
Manufacturer	Hynix Semiconductor
Description	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Published	Oct 11, 2014
Detailed Description	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as ...
Datasheet	H57V2582GTR-75J PDF File

Overview

256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 8,388,608 x 8 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Aug.
2009 1 111 Synchronous DRAM Memory 256Mbit H57V2582GTR-xxI Series Document Title 256Mbit (32M x8) Synchronous DRAM Revision History Revision No.
0.
1 1.
0 History Preliminary Release Draft Date Jun.
2009 Aug.
2009 Remark Rev 1.
0 / Aug.
2009 2 111 Synchronous DRAM Memory 256Mbit H57V2582GTR-xxI Series DESCRIPTION The Hynix H57V2582GTR Synchronous DRAM is 268,435,456bit CMOS Synchronous DRAM, ideally suited for the consumer memory applications which requires large memory density and high bandwidth.
It is organized as 4banks of 8,388,608 x 8 I/O.
Synchronous DRAM is a type of DRAM which operates in synchronization with input clock.
The Hy...

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