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IRF3305

International Rectifier
Part Number IRF3305
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 12, 2014
Detailed Description PD - 95879 AUTOMOTIVE MOSFET Features O IRF3305 HEXFET® Power MOSFET D O O O O Designed to support Linear Gate Driv...
Datasheet PDF File IRF3305 PDF File

IRF3305
IRF3305

Overview
PD - 95879 AUTOMOTIVE MOSFET Features O IRF3305 HEXFET® Power MOSFET D O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated VDSS = 55V RDS(on) = 8.
0mΩ Description Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device.
These features, coupled with 175°C junction operating temperature and low thermal resistance of 0.
45C/W make the IRF3305 an ideal device for linear automotive applications.
G S ID = 75A Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM TO-220AB Max.
140 99 75 560 330 2.
2 ± 20 W W/°C V mJ A mJ -55 to + 175 °C 300 (1.
6mm from case ) 10 lbf in (1.
1N m) A Units ™ PD @TC = 25°C Power Dissipation VGS EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current d Ù h 470 860 See Fig.
12a, 12b, 15, 16 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA Junction-to-Case y y i Parameter Typ.
––– 0.
50 ––– Max.
0.
45 ––– 62 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient i www.
irf.
com 1 7/2/04 IRF3305 V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
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