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C3890

Sanken electric
Part Number C3890
Manufacturer Sanken electric
Description Silicon NPN Transistor
Published Oct 12, 2014
Detailed Description 2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maxim...
Datasheet PDF File C3890 PDF File

C3890
C3890

Overview
2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3890 500 400 10 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.
6A IC=3A, IB=0.
6A VCE=12V, IE=–0.
5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.
5max 1.
3max 10typ 50typ (Ta=25°C) 2SC3890 Unit µA V V V MHz pF 13.
0min 16.
9±0.
3 8.
4±0.
2 µA 1.
35±0.
15 1.
35±0.
15 0.
85 +0.
2 -0.
1 0.
45 +0.
2 -0.
1 2.
54 2.
2±0.
2 2.
4±0.
2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 66 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
3 IB2 (A) –0.
6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.
5max 2.
54 3.
9 B C E I C – V CE Characteristics (Typical) 7 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) 6 800 mA A 600m 6 Collector Current I C (A) V B E (sat) 1 –55˚C (Cas e Temp) mp) ) as e 2 5 Tem p) ˚C I B= 40 0m A Collector Current I C (A) 300 mA 4 200 mA Tem p) e Te 25˚C (Cas 125˚C (Case 4 ) emp se T 25˚C (Ca ±0.
2 0.
8±0.
2 a b ø3.
3±0.
2 Weight : Approx 2.
0g a.
Type No.
b.
Lot No.
Temp 125 ˚C 2 2 12 5 ˚C V C E (sat) 0 0.
02 0.
05 0.
1 0.
5 1 –5 5˚ C 0 0 1 2 3 4 5 7 0 0 0.
2 0.
4 0.
6 0.
8 –55˚C (C (Cas 100mA (Ca e Te se mp) 1.
0 1.
2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 70 DC Cur rent Gain h FE 50 θ j - a (˚ C/W) h FE – I C Characteristics (Typical) t o n• t s t g • t f ( µ s) 7 5 t on •t stg • t f – I C Char...


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