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AO4498E

Alpha & Omega Semiconductors
Part Number AO4498E
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Oct 12, 2014
Detailed Description AO4498E 30V N-Channel MOSFET General Description The AO4498E combines advanced trench MOSFET technology with a low resi...
Datasheet PDF File AO4498E PDF File

AO4498E
AO4498E


Overview
AO4498E 30V N-Channel MOSFET General Description The AO4498E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 30V 18A < 5.
8mΩ < 8.
5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D G G S S S S Bottom View D Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C C TA=25° Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 30 ±20 18 14 120 3.
1 2 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev 1: November 2009 www.
aosmd.
com Page 1 of 5 AO4498E Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=16A Forward Transconductance Diode Forward Voltage VDS=5V, ID=18A IS=1A,VGS=0V TJ=125° C 1.
3 120 4.
8 7.
4 6.
8 50 0.
7 1 4 1840 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 230 145 0.
6 34 VGS=10V, VDS=15V, ID=18A 16 5.
6 6 VGS=10V, VDS=15V, RL=0.
83Ω, RGEN=3Ω IF=18A, dI/dt=500A/µs 10 22 2300 330 240 1.
25 42 20 7 10 8 10 33 8 12.
5 27 15 32 2760 430 340 1.
9 50 24 8.
4 14 5.
8 8.
9 8.
5 1.
8 Min 30 Typ 36 1 5 ±10 2.
3 Max Units V µA µA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On stat...


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