DatasheetsPDF.com

AO4494


Part Number AO4494
Manufacturer Alpha & Omega Semiconductors
Title 30V N-Channel MOSFET
Description The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM appli...
Features eady-State RθJL 16 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4494 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zer...

File Size 187.13KB
Datasheet AO4494 PDF File








Similar Ai Datasheet

AO4490 : The AO4490 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. Product Summary VDS (V) = 30V ID = 16A (VGS = 10V) RDS(ON) 7.2mΩ (VGS = 10V) RDS(ON) 10mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View G G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche.

AO4496 : The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Product Summary VDS (V) = 30V ID = 10A RDS(ON) 19.5mΩ RDS(ON) 26mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.1mH G ID IDM IAR EAR Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperat.

AO4496 : SMD Type N-Channel MOSFET AO4496 (KO4496) ■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON) < 19.5mΩ (VGS = 10V) ● RDS(ON) < 26mΩ (VGS = 4.5V) SOP-8 +0.040.21 -0.02 D MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAR EAR.

AO4498E : The AO4498E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 18A 5.8mΩ 8.5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D G G S S S S Bottom View D Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C C TA=25° Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambie.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)