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STT3434N

SeCoS
Part Number STT3434N
Manufacturer SeCoS
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description Elektronische Bauelemente STT3434N 6.5A, 30V, RDS(ON) 32 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A...
Datasheet PDF File STT3434N PDF File

STT3434N
STT3434N

Overview
Elektronische Bauelemente STT3434N 6.
5A, 30V, RDS(ON) 32 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper lead frame TSOP-6 saves board space.
Fast switching speed High performance trench technology PACKAGE INFORMATION Package MPQ TSOP-6 3K Leader Size 7 inch TSOP-6 A E L 654 B 123 F DG K C H J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 1.
10 MAX.
1.
90 REF.
0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
10 0.
60 REF.
0.
12 REF.
0° 10° 0.
95 REF.
DD DD GS ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 TA= 25°C TA= 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 ID IDM IS Power Dissipation 1 TA= 25°C TA= 70°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Maximum Thermal Resistance from Junction to Ambient 1 t≦10 sec Steady State RθJA Maximum Thermal Resistance from Junction to Case 1 RθJC Notes: 1.
2.
The surface of the device is mounted on a 1” x 1” FR4 Board.
The pulse width is limited by the maximum junction temperature.
http://www.
SeCoSGmbH.
com/ 02-May-2018 Rev.
C Rating 30 ±12 6.
5 5.
3 25 2.
9 2 1.
3 -55~150 62.
5 110 70 Unit V V A A A W °C °C / W Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente STT3434N 6.
5A, 30V, RDS(ON) 32 mΩ N-Channel Enhancement Mode MOSFET...


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