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STT3434

SeCoS
Part Number STT3434
Manufacturer SeCoS
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Pr...
Datasheet PDF File STT3434 PDF File

STT3434
STT3434

Overview
STT3434 Elektronische Bauelemente 6.
1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The TSOP-6 package is universally used for all commercial-industrial surface mount applications.
APPLICATIONS z z Low on-resistance Capable of 2.
5V gate drive PACKAGE DIMENSIONS REF.
A A1 A2 c D E E1 Millimeter Min.
Max.
1.
10 Max 0 0.
10 0.
70 1.
00 0.
12 Ref 2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 REF.
L L1 θ b e e1 Millimeter Min.
Max.
0.
45 Ref 0.
60 Ref 0° 10° 0.
30 0.
50 0.
95 Ref 1.
90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Thermal Resistance Junction-ambient3 Max.
Operating Junction and Storage Temperature Range 1 Symbol VDS VGS VGS@ 4.
5V, ID @TA=25℃ VGS@ 4.
5V, ID @TA=70℃ IDM PD @TA=25℃ RθJA Tj, Tstg Ratings 30 ±12 6.
1 4.
9 30 1.
14 0.
01 110 -55 ~ +150 Unit V V A A W W/℃ ℃/W ℃ 01-June-2005 Rev.
A Page 1 of 4 STT3434 Elektronische Bauelemente 6.
1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.
FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current (Tj=25℃) Zero Gate Voltage Drain Current (Tj=75℃) Symbol BVDSS VGS(th) gfs IGSS IDSS Min.
30 0.
6 - Typ.
20 8 1.
9 2.
6 21 45 40 30 Max.
±100 1 5 34 50 12 - Unit V V S nA uA Test Conditions VGS = 0, ID = 250uA VDS = VGS, ID = 1mA VDS = 10V, ID = 6.
1A VGS = ±12 V VDS = 30 V, VGS = 0 V VDS = 24 V, VGS = 0 V VGS = 4.
5 V, ID = 6.
1 A VGS = 2.
5 V, ID = 2.
0 A ID = 6.
1 A VDS = 15 V VGS = 4.
5 V VDS = 15 V ID = 1 A VGS = 4.
5 V RG = 6 Ω RL = 15 Ω Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf mΩ Gate-Source Charg...


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