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STT3457P

SeCoS
Part Number STT3457P
Manufacturer SeCoS
Description P-Channel MOSFET
Published Oct 15, 2014
Detailed Description STT3457P Elektronische Bauelemente -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product ...
Datasheet PDF File STT3457P PDF File

STT3457P
STT3457P

Overview
STT3457P Elektronische Bauelemente -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
F A E 6 5 4 TSOP-6 L B 1 2 3 FEATURES  C K H J    Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe TSOP-6 saves board space.
Fast switching speed High performance trench technology DG REF.
A B C D E F PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 1.
10 MAX.
1.
90 REF.
0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
10 0.
60 REF.
0.
12 REF.
0° 10° 0.
95 REF.
D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings -30 ±20 -4 -3.
2 -20 -1.
7 2 1.
3 -55 ~ 150 62.
5 110 Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA= 25°C TA= 70°C PD Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Tj, Tstg Thermal Resistance Ratings t ≦ 5 sec Steady State RJA °C / W Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
06-Jan-2011 Rev.
A Page 1 of 4 STT3457P Elektronische Bauelemente -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
U...


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