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STT3455

SeCoS
Part Number STT3455
Manufacturer SeCoS
Description P-Channel MOSFET
Published Oct 15, 2014
Detailed Description STT3455 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 100m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Pr...
Datasheet PDF File STT3455 PDF File

STT3455
STT3455

Overview
STT3455 Elektronische Bauelemente -4.
0A, -30V,RDS(ON) 100m£[ P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The STT3455 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The STT3455 is universally used for all commercial-industrial applications.
Features * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 REF.
3455 Date Code G 1 D 2 D 3 G S A A1 A2 c D E E1 Millimeter Min.
Max.
1.
10 MAX.
0 0.
10 0.
70 1.
00 0.
12 REF.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 REF.
L L1 b e e1 Millimeter Min.
Max.
0.
45 REF.
0.
60 REF.
0° 10° 0.
30 0.
50 0.
95 REF.
1.
90 REF.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbo l VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 Ratings -30 ±20 -4.
0 -3.
3 -20 2.
0 0.
016 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.
5 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 4 STT3455 Elektronische Bauelemente -4.
0A, -30V,RDS(ON) 100m£[ P-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) Static Drain-Source On-Resistance 2 o o o Symbo l BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
-30 _ Typ.
_ Max.
_ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C,ID=-1mA VDS=VGS, ID=-250uA VGS=± 20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-3.
5A VGS=...


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