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STT3470N

SeCoS
Part Number STT3470N
Manufacturer SeCoS
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description STT3470N Elektronische Bauelemente 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Produ...
Datasheet PDF File STT3470N PDF File

STT3470N
STT3470N

Overview
STT3470N Elektronische Bauelemente 2.
2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.
FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
F A E 6 5 4 TSOP-6 L B 1 2 3 C K H J FEATURES  DG    Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 1.
10 MAX.
1.
90 REF.
0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
10 0.
60 REF.
0.
12 REF.
0° 10° 0.
95 REF.
PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch D D G D D S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings 100 ±20 2.
2 ±10 1.
1 2 -55 ~ 150 Unit V V A A A W °C TA= 25°C TA= 25°C Thermal Resistance Ratings Parameter Maximum Junction to Ambient 1 Notes 1.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
Symbol t ≦ 10 sec Steady State Typ.
93 130 Max.
110 150 Unit °C / W RJA 2.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
30-Dec-2010 Rev.
A Page 1 of 2 STT3470N Elektronische Bauelemente 2.
2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.
FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshol...


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