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STT3471P

SeCoS
Part Number STT3471P
Manufacturer SeCoS
Description P-Channel MOSFET
Published Oct 15, 2014
Detailed Description STT3471P Elektronische Bauelemente -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product ...
Datasheet PDF File STT3471P PDF File

STT3471P
STT3471P

Overview
STT3471P Elektronische Bauelemente -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
A E 6 5 4 TSOP-6 L FEATURES     Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe TSOP-6 saves board space.
Fast switching speed.
High performance trench technology.
B F DG 1 2 3 C K H J APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 1.
10 MAX.
1.
90 REF.
0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
10 0.
60 REF.
0.
12 REF.
0° 10° 0.
95 REF.
PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7’ inch D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range 1 Symbol VDS VGS TA= 25°C TA= 70°C ID IDM IS TA= 25°C TA= 70°C PD Tj, Tstg Rating -100 ±20 2.
0 1.
6 -8 -2.
1 2.
0 1.
3 -55~150 Unit V V A A A W °C Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 5 sec RJA 62.
5 110 °C / W Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
08-Apr-2011 Rev.
A Page 1 of 2 STT3471P Elektronische Bauelemente -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Vo...


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