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SI2302

MCC
Part Number SI2302
Manufacturer MCC
Description N-channel MOSFET
Published Oct 15, 2014
Detailed Description Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epox...
Datasheet PDF File SI2302 PDF File

SI2302
SI2302

Overview
Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free.
“Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant.
See Ordering Information) SI2302 N-Channel Enhancement Mode Field Effect Transistor Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 100°C/W Junction to Ambient Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 3.
0 A Drain Current-Pulsed(Note 2) IDM 10 A Power Dissipation PD 1.
25 W Note: 1.
Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Internal Structure D G S 1.
GATE 2.
SOURCE 3.
DRAIN Marking: S2 SOT-23 A D 3 12 F E CB G H J L K DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.
110 0.
120 2.
80 3.
04 B 0.
083 0.
104 2.
10 2.
64 C 0.
047 0.
055 1.
20 1.
40 D 0.
034 0.
041 0.
85 1.
05 E 0.
067 0.
083 1.
70 2.
10 F 0.
018 0.
024 0.
45 0.
60 G 0.
0004 0.
006 0.
01 0.
15 H 0.
035 0.
043 0.
90 1.
10 J 0.
003 0.
007 0.
08 0.
18 K 0.
012 0.
020 0.
30 0.
51 L 0.
007 0.
020 0.
20 0.
50 NOTE Suggested Solder Pad Layout 0.
031 0.
800 0.
035 0.
900 0.
079 2.
000 inches mm 0.
037 0.
950 0.
037 0.
950 Rev.
3-4-03112021 1/4 MCCSEMI.
COM SI2302 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA Gate-Threshold Voltage(Note3) VGS(th) VDS=VGS, ID=50µA Gate-Body Leakage Current IGSS VGS=± 8V, VDS=0V Zero Gate Voltage Drain Current Drain-Source On-Resistance(Note 4) Forward Transconductance(Note 4) IDSS RDS(on) gFS VDS=20V, VGS=0V VGS=4.
5V, ID=4.
3A VGS=2.
5V, ID=3.
0A VDS=5V, ID=3.
6A ...


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