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SI2302

VTR
Part Number SI2302
Manufacturer VTR
Description 20V N-Channel MOSFET
Published Oct 15, 2014
Detailed Description 20V N-Cha SI2302 VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 3.6A 85m Ω 115mΩ Features Advanced tr...
Datasheet PDF File SI2302 PDF File

SI2302
SI2302

Overview
20V N-Cha SI2302 VDS= 20V RDS(ON), Vgs@ 4.
5V, Ids@ RDS(ON), Vgs@ 2.
5V, Ids@ 2.
0A 3.
6A 85m Ω 115mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23 REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0e 10e Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM 2) 20 ±8 2.
3 8 1.
25 0.
8 -55 to 150 100 o V A TA = 25o TA = 75oC 2) Maximum Power Dissipation PD TJ, Tstg RthJA W o Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) Junction-to-Ambient Thermal Resistance (PCB mounted) C 3) 166 C/W Notes 1) Pulse width limited by maximum u j nction temperature.
2) Surface Mounted on FR4 Board, t 5 sec.
3) Surface Mounted on FR4 Board.
1 www.
vtr.
so SI2302 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current 0 Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max.
Diode Forward Current Diode Forward Voltage 1) 1) 1) Symbol Test Condition Min.
Typ.
Miax.
Unit BVDSS RDS(on) VGS = 0V, ID = 10uA VGS = 4.
5V, I D = 3.
6A VGS = 2.
5V, I D = 3.
1A 20 70 85 0.
6 1 o V 85 115 V uA 10 ±100 10 nA S mΩ VGS(th) IDSS IGSS gfs VDS =VGS, ID = 250uA VDS = 16V, V VDS = 20V, V GS GS = 0V = 0V TJ=55 C VGS = ± 8V, VDS = 0V VDS = 5V, I D = 3.
6A Qg VDS = 10V, I D = 3.
6A Qgs Qgd td(on) tr ID td(off...


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